Intrinsic defects as a source of $\text{n}$-type conductivity in CrSBr

Abstract

Understanding and controlling native defects is essential for unlocking the full potential of two-dimensional magnetic semiconductors. Here, angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations are used to explore the electronic properties of bulk CrSBr. ARPES measurements reveal clear signatures of conduction band filling in as-grown crystals, indicative of unintentional doping. An analysis of intrinsic defects based on density functional theory (DFT) identifies chromium interstitials ($C{r}_i$) stabilized between CrSBr layers as the most favorable shallow donors. Bromine-on-sulfur antisites ($B{r}_S$) and bromine vacancies ($V_{Br}$) are also found to act as potential donors, albeit with deeper ionization energies. Our results shed light on the origin of unintentional $\text{n}$-type doping of CrSBr and pave the way for new strategies for defect control and electronic property tuning in this van der Waals magnet.

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Cited by in corpus (1)

• Crystallographic Orientation-Dependent Magnetotransport in the Layered Antiferromagnet -- CrSBr