Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors

Abstract

Two-dimensional materials (2DMs) are a promising alternative to complement and upgrade high-frequency electronics. However, in order to boost their adoption, the availability of numerical tools and physically-based models able to support the experimental activities and to provide them with useful guidelines becomes essential. In this context, we propose a theoretical approach that combines numerical simulations and small-signal modeling to analyze 2DM-based FETs for radio-frequency applications. This multi-scale scheme takes into account non-idealities, such as interface traps, carrier velocity saturation, or short channel effects, by means of self-consistent physics-based numerical calculations that later feed the circuit level via a small-signal model based on the dynamic intrinsic capacitances of the device. At the circuit stage, the possibilities range from the evaluation of the performance of a single device to the design of complex circuits combining multiple transistors. In this work, we validate our scheme against experimental results and exemplify its use and capability assessing the impact of the channel scaling on the performance of MoS2-based FETs targeting RF applications.

6 pages, 6 figures

References in corpus (5)

• Hysteresis in the transfer characteristics of MoS2 transistors
• MoS2 Transistors Operating at Gigahertz Frequencies
• Short channel effects in graphene-based field effect transistors targeting radio-frequency applications
• Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances
• GFET Asymmetric Transfer Response Analysis through Access Region Resistances