Overcoming Boltzmann's Tyranny in a Transistor via the Topological Quantum Field Effect

Abstract

The sub-threshold swing is the fundamental critical parameter determining the operation of a transistor in low-power applications such as switches. It determines the fraction of dissipation due to the gate capacitance used for turning the device on and off, and in a conventional transistor it is limited by Boltzmann's tyranny to kTln(10)/q, or 60 mV per decade. Here, we demonstrate that the sub-threshold swing of a topological transistor, in which conduction is enabled by a topological phase transition via electric field switching, can be sizably reduced in a non-interacting system by modulating the Rashba spin-orbit interaction via a top-gate electric field. We refer to this as the Topological Quantum Field Effect and to the transistor as a Topological Quantum Field Effect transistor (TQFET). By developing a general theoretical framework for quantum spin Hall materials with honeycomb lattices we explicitly show that the Rashba interaction can reduce the sub-threshold swing by more than 25% compared to Boltzmann's limit in currently available materials, but without any fundamental lower bound, a discovery that can guide future materials design and steer the engineering of topological quantum devices.

arXiv comment14 pages, 4 figures, 1 table

References in corpus (25)

• Quantum Spin Hall Effect in Graphene
• $Z_2$ Topological Order and the Quantum Spin Hall Effect
• Quantum Spin Hall Effect in Silicene
• Quantum Spin Hall Effect and Topological Field Effect Transistor in Two-Dimensional Transition Metal Dichalcogenides
• Low-energy effective Hamiltonian involving spin-orbit coupling in Silicene and Two-Dimensional Germanium and Tin
• Large-gap quantum spin Hall insulators in tin films
• The electronic properties of bilayer graphene
• Intrinsic and Rashba Spin-orbit Interactions in Graphene Sheets
• Bismuthene on a SiC Substrate: A Candidate for a New High-Temperature Quantum Spin Hall Paradigm
• Spin-orbit gap of graphene: First-principles calculations
• Oscillatory crossover from two dimensional to three dimensional topological insulators
• Electric Field Induced Topological Phase Transition in Two-Dimensional Few-layer Black Phosphorus
• Effective continuous model for surface states and thin films of three dimensional topological insulators
• Spin-filtered Edge States with an Electrically Tunable Gap in a Two-Dimensional Topological Crystalline Insulator
• Graphene with Structure-Induced Spin-Orbit Coupling: Spin-Polarized States, Spin Zero Modes, and Quantum Hall Effect
• Electric Field-Tuned Topological Phase Transition in Ultra-Thin Na3Bi - Towards a Topological Transistor
• Long Range Intrinsic Ferromagnetism in Two Dimensional Materials and Dissipationless Future Technologies
• Quantized Conductance and Field-Effect Topological Quantum Transistor in Silicene Nanoribbons
• Electric control of topological phase transitions in Dirac semimetal thin films
• A new paradigm for the quantum spin Hall effect at high temperatures
• Giant Spin-valley Polarization and Multiple Hall Effect in Functionalized Bi Monolayers
• Quantum Anomalous Hall Effect in Magnetic Doped Topological Insulators and Ferromagnetic Spin-Gapless Semiconductors -- A Perspective Review
• Group theoretical and topological analysis of the quantum spin Hall effect in silicene
• Optically Probing Tunable Band Topology in Atomic Monolayers
• Magnetic quantum phase transition in Cr-doped Bi2(SexTe1-x)3 driven by the Stark effect

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• Momentum relaxation effects in 2D-Xene field effect device structures
• Quantum Enhanced Josephson Junction Field-Effect Transistors for Logic Applications
• Tight-Binding Device Modeling of 2-D Topological Insulator Field-Effect Transistors With Gate-Induced Phase Transition
• Control of valley optical conductivity and topological phases in buckled hexagonal lattice by orientation of in-plane magnetic field
• Two-Dimensional Band Dispersion of Ultra-Flat Hexagonal Bismuthene Grown on Ag(111) Bulk and Quantum-Well Films
• Few-fermion resonant tunneling and underbarrier trapping in asymmetric potentials
• Interface engineering of van der Waals heterostructures towards energy-efficient quantum devices operating at high temperatures
• Tailoring Robust Quantum Anomalous Hall Effect via Entropy-Engineering
• 2D Canonical Approach for Beating the Boltzmann Tyranny Using Memory
• Classical-to-Quantum Crossover in 2D TMD Field-Effect Transistors: A First-Principles Study via Sub-10 nm Channel Scaling Beyond the Boltzmann Tyranny
• First-principles modeling of electrostatics and transport in 2D topological transistors