A valleytronic diamond transistor: electrostatic control of valley-currents and charge state manipulation of NV centers

Abstract

The valley degree of freedom in many-valley semiconductors provides a new paradigm for storing and processing information in valleytronic and quantum-computing applications. Achieving practical devices require all-electric control of long-lived valley-polarized states, without the use of strong external magnetic fields. Attributable to the extreme strength of the carbon-carbon bond, diamond possesses exceptionally stable valley states which provides a useful platform for valleytronic devices. Using ultra-pure single-crystalline diamond, we here demonstrate electrostatic control of valley-currents in a dual gate field-effect transistor, where the electrons are generated with a short UV pulse. The charge -- and the valley -- current measured at receiving electrodes are controlled separately by varying the gate voltages. A proposed model based on drift-diffusion equations coupled through rate terms, with the rates computed by microscopic Monte Carlo simulations, is used to interpret experimental data. As an application, valley-current charge state modulation of nitrogen-vacancy (NV) centers is demonstrated.

References in corpus (12)

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Cited by in corpus (7)

• Optical activation and detection of charge transport between individual color centers in room-temperature diamond
• Ultrafast valley-selective coherent optical manipulation with excitons in WSe${}_2$ and MoS${}_2$ monolayers
• Rapid direct growth of graphene on single-crystalline diamond using nickel as catalyst
• Detection and modeling of hole capture by single point defects under variable electric fields
• Semiconductor Bloch equation analysis of optical Stark and Bloch-Siegert shifts in monolayers WSe${}_2$ and MoS${}_2$
• Graphene valley polarization as a function of carrier-envelope phase in few-cycle laser pulses and its footprints in harmonic signals
• Ultrafast room-temperature valley manipulation in silicon and diamond