Semiconductor Bloch equation analysis of optical Stark and Bloch-Siegert shifts in monolayers WSe${}_2$ and MoS${}_2$

Abstract

We report on the theoretical and experimental investigation of valley-selective optical Stark and Bloch-Siegert shifts of exciton resonances in monolayers WSe${}_2$ and MoS${}_2$ induced by strong circularly polarized nonresonant optical fields. We predict and observe transient shifts of both 1sA and 1sB exciton transitions in the linear interaction regime. The theoretical description is based on semiconductor Bloch equations. The solutions of the equations are obtained with a modified perturbation technique, which takes into account many-body Coulomb interaction effects. These solutions allow to explain the polarization dependence of the shifts and calculate their values analytically. We found experimentally the limits of the applicability of the theoretical description by observing the transient exciton spectra change due to many-body effects at high field amplitudes of the driving wave.

24 pages, 10 figures

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Cited by in corpus (4)

• Ultrafast valley-selective coherent optical manipulation with excitons in WSe${}_2$ and MoS${}_2$ monolayers
• High harmonic generation in monolayer MoS2 controlled by resonant and near-resonant pulses on ultrashort time scales
• Effects of Floquet Engineering on the Coherent Exciton Dynamics in Monolayer WS${}_2$
• Error bounds for the Floquet-Magnus expansion and their application to the semiclassical quantum Rabi model