Global strain-induced scalar potential in graphene devices
arXiv:2009.03035 · doi:10.1038/s42005-021-00651-y
Abstract
By mechanically distorting a crystal lattice it is possible to engineer the electronic and optical properties of a material. In graphene, one of the major effects of such a distortion is an energy shift of the Dirac point, often described as a scalar potential. We demonstrate how such a scalar potential can be generated systematically over an entire electronic device and how the resulting changes in the graphene work function can be detected in transport experiments. Combined with Raman spectroscopy, we obtain a characteristic scalar potential consistent with recent theoretical estimates. This direct evidence for a scalar potential on a macroscopic scale due to deterministically generated strain in graphene paves the way for engineering the optical and electronic properties of graphene and similar materials by using external strain.
References in corpus (38)
- The electronic properties of graphene
- Electronic transport in two dimensional graphene
- Uniaxial Strain in Graphene by Raman Spectroscopy: G peak splitting, Gruneisen Parameters and Sample Orientation
- Energy gaps, topological insulator state and zero-field quantum Hall effect in graphene by strain engineering
- A tight-binding approach to uniaxial strain in graphene
- Quantum interference and Klein tunneling in graphene heterojunctions
- Observation of the Fractional Quantum Hall Effect in Graphene
- Electronic Properties of Graphene in a Strong Magnetic Field
- Fractional quantum Hall effect and insulating phase of Dirac electrons in graphene
- Effects of Strain on Electronic Properties of Graphene
- Multicomponent fractional quantum Hall effect in graphene
- Electronic transport and quantum Hall effect in bipolar graphene p-n-p junction
- Strain-dependent Splitting of Double Resonance Raman Scattering Band in Graphene
- Generating quantizing pseudomagnetic fields by bending graphene ribbons
- Raman 2D-Band Splitting in Graphene: Theory and Experiment
- Strain-induced pseudo-magnetic field for novel graphene electronics
- Space dependent Fermi velocity in strained graphene
- Ballistic interferences in suspended graphene
- Pseudomagnetic fields and ballistic transport in a suspended graphene sheet
- Visualizing Strain-induced Pseudo magnetic Fields in Graphene through an hBN Magnifying Glass
- New generation of moiré superlattices in doubly aligned hBN/graphene/hBN heterostructures
- Programmable Extreme Pseudomagnetic Fields in Graphene by a Uniaxial Stretch
- Valley Polarization and Inversion in Strained Graphene via Pseudo-Landau Levels, Valley Splitting of Real Landau Levels and Confined States
- The two-dimensional Brillouin zone of uniaxially strained graphene
- A ballistic pn junction in suspended graphene with split bottom gates
- Room temperature strain-induced Landau levels in graphene on a wafer-scale platform
- Selective equilibration of spin and valley polarized quantum Hall edge states in graphene
- Superconducting States in pseudo-Landau Levels of Strained Graphene
- Observation of Landau level-like quantizations at 77 K along a strained-induced graphene ridge
- Tuning anti-Klein to Klein tunneling in bilayer graphene
- In-situ strain tuning in hBN-encapsulated graphene electronic devices
- Fabry-Pérot resonances in a graphene/hBN Moiré superlattice
- Quantum Wires and Waveguides Formed in Graphene by Strain
- Mobility enhancement in graphene by in situ reduction of random strain fluctuations
- Graphene Quantum Strain Transistors
- Work function, deformation potential, and collapse of Landau levels in strained graphene and silicene
- Uniaxial Strain Induced Topological Phase Transition in Bismuth-Tellurohalide-Graphene Heterostructures
- Competition of trivial and topological phases in patterned graphene based heterostructures