Low Temperature Homoepitaxy Of (010) $\beta$-Ga${}_2$O${}_3$ By Metalorganic Vapor Phase Epitaxy : Expanding The Growth Window

Abstract

In this work, we report on the growth of high-mobility $\beta$-Ga${}_2$O${}_3$ homoepitaxial thin films grown at a temperature much lower than the conventional growth temperature window for metalorganic vapor phase epitaxy. Low-temperature $\beta$-Ga${}_2$O${}_3$ thin films grown at 600${}^{\circ }$C on Fe-doped (010) bulk substrates exhibits remarkable crystalline quality which is evident from the measured room temperature Hall mobility of 186 cm${}^2$/Vs for the unintentionally doped films. N-type doping is achieved by using Si as a dopant and controllable doping in the range of 2$\times$10${}^{16}$ - 2$\times$10${}^{19}$ cm${}^{-3}$ is studied. Si incorporation and activation is studied by comparing silicon concentration from secondary ion mass spectroscopy (SIMS) and electron concentration from temperature-dependent Hall measurements. The films exhibit high purity (low C and H concentrations) with a very low concentration of compensating acceptors (2$\times$10${}^{15}$ cm${}^{-3}$) even at this growth temperature. Additionally, abrupt doping profile with forward decay of $\sim$ 5nm/dec (10 times improvement compared to what is observed for thin films grown at 810${}^{\circ }$C) is demonstrated by growing at a lower temperature.

5 pages, 6 figures

References in corpus (3)

• Intrinsic Electron Mobility Limits in beta-Ga2O3
• Effects of Incomplete Ionization on Beta - Ga2O3 Power Devices: Unintentional Donor with Energy 110 meV
• Delta-doped \b{eta}-Ga2O3 thin films and \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy

Cited by in corpus (1)

• Oxygen annealing induced changes in defects within beta-Ga2O3 epitaxial films measured using photoluminescence