High-quality electrical transport using scalable CVD graphene

Abstract

Producing and manipulating graphene on fab-compatible scale, while maintaining its remarkable carrier mobility, is key to finalize its technological application. We show that a large-scale approach (chemical vapor deposition on Cu followed by polymer-mediated semi-dry transfer) yields single-layer graphene crystals fully comparable, in terms of electronic transport, to micro-mechanically exfoliated flakes. hBN is used to encapsulate the graphene crystals $-$ without taking part to their detachment from the growth catalyst $-$ and study their intrinsic properties in field-effect devices. At room temperature, the electron-phonon coupling sets the mobility to $\sim 1.3\times 10^5$ cm${}^2$V${}^{-1}$s${}^{-1}$ at $\sim 10^{11}$ cm${}^{-2}$ concentration. At cryogenic temperatures, the mobility ($>6\times 10^5$ cm${}^2$V${}^{-1}$s${}^{-1}$ at $\sim 10^{11}$ cm${}^{-2}$) is limited by the devices' physical edges, and charge fluctuations $<7\times 10^9$ cm${}^{-2}$ are detected. Under perpendicular magnetic fields, we observe early onset of Landau quantization ($B\sim 50$ mT) and signatures of electronic correlation, including the fractional quantum Hall effect.

This is the unedited authors' version of the submitted article; 24 pages, 4 figures and supplementary information

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• Fractional quantum Hall effect in CVD-grown graphene