A random-walk benchmark for single-electron circuits

Abstract

Mesoscopic integrated circuits achieving high-fidelity control of elementary quantum systems require new methodology for benchmarking. We offer circuit-level statistical description of rare-error accumulation in terms of a universal random-walk model for on-demand electron transfer. For a high-fidelity single-electron circuit, realized in the experiment as a chain of quantum dots in a GaAs/AlGaAs heterostructure, the error of the transfer operation is probed by charge counting. Error rates for extra ($P_{+}$) or missing ($P_{-}$) electrons of the electron shuttle are measured to $P_{-}=(6.92\pm 0.14)\times 10^{-5}$ and $P_{+}=(2.13\pm 0.08)\times 10^{-5}$ with uncertainty due to correlated noise in the environment. Furthermore, precise control over the timing of the random walk allows to explore the role of memory as the clock frequency is increased.

References in corpus (35)

• Supplementary information for "Quantum supremacy using a programmable superconducting processor"
• Advances in Quantum Metrology
• Surface codes: Towards practical large-scale quantum computation
• The Physical Implementation of Quantum Computation
• Logic gates at the surface code threshold: Superconducting qubits poised for fault-tolerant quantum computing
• Randomized Benchmarking of Quantum Gates
• High-fidelity quantum logic gates using trapped-ion hyperfine qubits
• High-fidelity two-qubit quantum logic gates using trapped calcium-43 ions
• Robust randomized benchmarking of quantum processes
• 1/f noise: implications for solid-state quantum information
• High-Fidelity Universal Gate Set for ${}^9$Be${}^{+}$ Ion Qubits
• Towards fault-tolerant quantum computing with trapped ions
• Scalable Noise Estimation with Random Unitary Operators
• Complete universal quantum gate set approaching fault-tolerant thresholds with superconducting qubits
• Fidelity benchmarks for two-qubit gates in silicon
• Single-electron current sources: towards a refined definition of ampere
• Shuttling a single charge across a one-dimensional array of silicon quantum dots
• Characterizing large-scale quantum computers via cycle benchmarking
• Coherent control of single electrons: a review of current progress
• Single-parameter non-adiabatic quantized charge pumping
• The ultimate precision limits for noisy frequency estimation
• Investigating the limits of randomized benchmarking protocols
• Non-adiabatic quantized charge pumping with tunable-barrier quantum dots: a review of current progress
• Universal decay cascade model for dynamic quantum dot initialization
• Qubit metrology of ultralow phase noise using randomized benchmarking
• Validation of a quantized-current source with 0.2 ppm uncertainty
• A self-referenced single-electron quantized-current source
• The effect of noise correlations on randomized benchmarking
• Quantum nondemolition measurement of an electron spin qubit
• Sound-driven single-electron transfer in a circuit of coupled quantum rails
• Experimental quantum verification in the presence of temporally correlated noise
• Evidence for universality of tunable-barrier electron pumps
• Trapping and counting ballistic non-equilibrium electrons
• A quantized current source with mesoscopic feedback
• Waiting time distributions in a two-level fluctuator coupled to a superconducting charge detector

Cited by in corpus (7)

• Two electrons interacting at a mesoscopic beam splitter
• Precision measurement of an electron pump at 2 GHz
• Collision of two interacting electrons on a mesoscopic beamsplitter: exact solution in the classical limit
• Ultimate accuracy of frequency to power conversion by single-electron injection
• Modeling shallow confinement in tuneable quantum dots
• Universal scaling of adiabatic tunneling out of a shallow confinement potential
• Suppression of back-tunnelling events in hybrid single-electron turnstiles by source-drain bias modulation