Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances

Abstract

We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor based field effect transistors, which provides explicit expressions for the drain current, terminal charges and intrinsic capacitances. The drain current model is based on the drift-diffusion mechanism for the carrier transport and considers Fermi-Dirac statistics coupled with an appropriate field-effect approach. The terminal charge and intrinsic capacitance models are calculated adopting a Ward-Dutton linear charge partition scheme that guarantees charge-conservation. It has been implemented in Verilog-A to make it compatible with standard circuit simulators. In order to benchmark the proposed modeling framework we also present experimental DC and high-frequency measurements of a purposely fabricated monolayer MoS2 FET showing excellent agreement between the model and the experiment and thus demonstrating the capabilities of the combined approach to predict the performance of 2DFETs.

7 pages, 6 figures

References in corpus (4)

• Integrated Circuits Based on Bilayer MoS2 Transistors
• Computational 2D Materials Database: Electronic Structure of Transition-Metal Dichalcogenides and Oxides
• k.p theory for two-dimensional transition metal dichalcogenide semiconductors
• Carrier statistics and quantum capacitance effects on mobility extraction in two-dimensional crystal semiconductor field-effect transistors

Cited by in corpus (2)

• A Graphene Field-Effect Transistor Based Analogue Phase Shifter for High-Frequency Applications
• Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors