activity
20152022
most citedThermal Oxidation of WSe2 Nano-sheets Adhered on SiO2/Si Substrates

100 citations · 220 across the 9 of their papers we have counts for

collaborators

11 papers

cond-mat.mes-hall2022

All Electrical Control and Temperature Dependence of the Spin and Valley Hall Effect in Monolayer WSe2 Transistors

Xintong Li, Zhida Liu, Yihan Liu +4

Heavy metal-based two-dimensional van der Waals materials have a large, coupled spin and valley Hall effect (SVHE) that has potential use in spintronics and valleytronics. Optical…

cond-mat.mes-hall20214 cited

Universal Non-Volatile Resistive Switching Behavior in 2D Metal Dichalcogenides Featuring Unique Conductive-Point Random Access Memory Effect

Xiaohan Wu, Ruijing Ge, Yuqian Gu +9

Two-dimensional materials have been discovered to exhibit non-volatile resistive switching (NVRS) phenomenon. In our work, we reported the universal NVRS behavior in a dozen metal…

cond-mat.mtrl-sci2021

Strain-Modulated Interlayer Charge and Energy Transfers in MoS2/WS2 Heterobilayer

Joon-Seok Kim, Nikhilesh Maity, Myungsoo Kim +5

Excitonic properties in 2D heterobilayers are closely governed by charge transfer (CT) and excitonic energy transfer (ET) at van der Waals interfaces. Various means have been emplo…

physics.app-ph20216 cited

A small-signal description of black phosphorus transistor technologies for high-frequency applications

Leslie Valdez-Sandoval, Eloy Ramirez-Garcia, Saungeun Park +3

This work presents a small-signal high-frequency (HF) equivalent circuit (EC) to model AC performances of black-phosphorous field-effect transistors (BPFETs). The proposed EC is ab…

cs.HC202027 cited

Reduced Graphene Oxide Tattoo as Wearable Proximity Sensor

Vaishakh Kedambaimoole, Neelotpala Kumar, Vijay Shirhatti +6

The human body is punctuated with wide array of sensory systems that provide a high evolutionary advantage by facilitating formation of a detailed picture of the immediate surround…

cond-mat.mes-hall202026 cited

Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances

Francisco Pasadas, Enrique G. Marin, Alejandro Toral-Lopez +5

We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor based field effect transistors, which provides explicit expressions for the drain…