Observation and origin of the $\Delta$-manifold in Si:P $\delta$-layers

Abstract

By creating a sharp and dense dopant profile of phosphorus atoms buried within a silicon host, a two-dimensional electron gas is formed within the dopant region. Quantum confinement effects induced by reducing the thickness of the dopant layer, from $4.0$\,nm to the single-layer limit, are explored using angle-resolved photoemission spectroscopy. The location of theoretically predicted, but experimentally hitherto unobserved, quantum well states known as the $\Delta$-manifold is revealed. Moreover, the number of carriers hosted within the $\Delta$-manifold is shown to be strongly affected by the confinement potential, opening the possibility to select carrier characteristics by tuning the dopant-layer thickness.

arXiv comment5 pages, 2 figures, 1 table

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Cited by in corpus (10)

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• Uncovering anisotropic effects of electric high-moment dipoles on the tunneling current in $\delta$-layer tunnel junctions
• Influence of imperfections on tunneling rate in $\delta$-layer junctions
• An autoencoder for compressing angle-resolved photoemission spectroscopy data
• Electronic structure of boron and aluminum $\delta$-doped layers in silicon
• Probing the Atomic Arrangement of Sub-Surface Dopants in a Silicon Quantum Device Platform
• Suppression of mid-infrared plasma resonance due to quantum confinement in delta-doped silicon
• Direct measurement of 2DEG states in shallow Si:Sb $\delta$-layers
• First principles band structure of interacting phosphorus and boron/aluminum $\delta$-doped layers in silicon