20 citations · 24 across the 7 of their papers we have counts for
7 papers
The submonolayer assembly of C60F48 surface acceptors on the hydrogen-terminated (100) diamond surface
Alex K. Schenk, Kevin J. Rietwyk, Mark T. Edmonds +2
We have characterised the submonolayer assembly of C60F48 molecular surface acceptors on the hydrogen terminated (100) diamond surface using scanning tunneling microscopy and X-ray…
Identification of defects and the origins of surface noise on hydrogen-terminated (100) diamond
Yi-Ying Sung, Lachlan Oberg, Rebecca Griffin +8
Near-surface nitrogen-vacancy centres are critical to many diamond-based quantum technologies such as information processors and nanosensors. Surface defects play an important role…
Formation of a boron-oxide termination for the (100) diamond surface
Alex K. Schenk, Rebecca Griffin, Anton Tadich +2
A boron-oxide termination of the diamond (100) surface has been formed by depositing molecular boron oxide onto the hydrogen-terminated (100) diamond surface under ul…
Epitaxial growth of SiC on (100) Diamond
A. Tsai, A. Aghajamali, N. Dontschuk +11
We demonstrate locally coherent heteroepitaxial growth of silicon carbide (SiC) on diamond, a result contrary to current understanding of heterojunctions as the lattice mismatch ex…
Observation and origin of the -manifold in Si:P -layers
Ann Julie Holt, Sanjoy K. Mahatha, Raluca-Maria Stan +9
By creating a sharp and dense dopant profile of phosphorus atoms buried within a silicon host, a two-dimensional electron gas is formed within the dopant region. Quantum confinemen…
Evidence for Primal sp2 Defects at the Diamond Surface: Candidates for Electron Trapping and Noise Sources
Alastair Stacey, Nikolai Dontschuk, Jyh-Pin Chou +11
Diamond materials are central to an increasing range of advanced technological demonstrations, from high power electronics, to nano-scale quantum bio-imaging with unprecedented sen…