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cond-mat.mtrl-sci2020
Epitaxial growth of SiC on (100) Diamond
A. Tsai, A. Aghajamali, N. Dontschuk +11
We demonstrate locally coherent heteroepitaxial growth of silicon carbide (SiC) on diamond, a result contrary to current understanding of heterojunctions as the lattice mismatch ex…
cond-mat.mtrl-sci2019
Observation and origin of the -manifold in Si:P -layers
Ann Julie Holt, Sanjoy K. Mahatha, Raluca-Maria Stan +9
By creating a sharp and dense dopant profile of phosphorus atoms buried within a silicon host, a two-dimensional electron gas is formed within the dopant region. Quantum confinemen…
cond-mat.mtrl-sci2015
Extremely high negative electron affinity of diamond via magnesium adsorption
Kane M. O'Donnell, Mark T. Edmonds, Anton Tadich +5
We report large negative electron affinity (NEA) on diamond (100) using magnesium adsorption on a previously oxygen-terminated surface. The measured NEA is up to e…