20 citations · 38 across the 4 of their papers we have counts for
4 papers
Direct measurement of 2DEG states in shallow Si:Sb -layers
Frode S. Strand, Simon P. Cooil, Quinn T. Campbell +13
We investigate the electronic structure of high-density layers of Sb dopants in a silicon host, so-called Si:Sb -layers. We show that, in spite of the known challenges in produc…
Probing the Atomic Arrangement of Sub-Surface Dopants in a Silicon Quantum Device Platform
Håkon I. Røst, Ezequiel Tosi, Frode S. Strand +4
High-density structures of sub-surface phosphorus dopants in silicon continue to garner interest as a silicon-based quantum computer platform, however, a much-needed confirmation o…
Low Temperature Growth of Graphene on Semiconductor
Håkon I. Røst, Rajesh K. Chellappan, Frode S. Strand +13
The industrial realization of graphene has so far been limited by challenges related to the quality, reproducibility, and high process temperatures required to manufacture graphene…
Observation and origin of the -manifold in Si:P -layers
Ann Julie Holt, Sanjoy K. Mahatha, Raluca-Maria Stan +9
By creating a sharp and dense dopant profile of phosphorus atoms buried within a silicon host, a two-dimensional electron gas is formed within the dopant region. Quantum confinemen…