Electrical control of a spin qubit in InSb nanowire quantum dots: strongly suppressed spin relaxation in high magnetic field
arXiv:1911.07942 · doi:10.1103/PhysRevB.101.155307
Abstract
In this paper, we investigate the impact of gating potential and magnetic field on phonon induced spin relaxation rate and the speed of the electrically driven single-qubit operations inside the InSb nanowire spin qubit. We show that a strong factor and high magnetic field strength lead to the prevailing influence of electron-phonon scattering due to deformation potential, considered irrelevant for materials with a weak factor, like GaAs or Si/SiGe. In this regime, we find that spin relaxation between qubit states is significantly suppressed due to the confinement perpendicular to the nanowire axis. We also find that maximization of the number of single-qubit operations that can be performed during the lifetime of the spin qubit requires single quantum dot gating potential.
arXiv comment9 pages, 4 figures. Noticeable changes with respect to the first version
References in corpus (38)
- Driven coherent oscillations of a single electron spin in a quantum dot
- Coherent control of a single electron spin with electric fields
- Spin-orbit qubit in a semiconductor nanowire
- Spin relaxation in semiconductor quantum dots
- Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot
- Spin-flip transitions between Zeeman sublevels in semiconductor quantum dots
- Electric Dipole Induced Spin Resonance in Quantum Dots
- Spectroscopy of spin-orbit quantum bits in indium antimonide nanowires
- Two-qubit Gate of Combined Single Spin Rotation and Inter-dot Spin Exchange in a Double Quantum Dot
- Spin dynamics in InAs-nanowire quantum-dots coupled to a transmission line
- Decoherence of electron spin qubits in Si-based quantum computers
- Gate control of spin dynamics in III-V semiconductor quantum dots
- Spin properties of single electron states in coupled quantum dots
- Spin dynamics in a strongly driven system: very slow Rabi oscillations
- Controlling a Nanowire Spin-Orbit Qubit via Electric-Dipole Spin Resonance
- Spin relaxations in semiconductor quantum dots
- Correlation-induced conductance suppression at level degeneracy in a quantum dot
- Hyperfine-phonon spin relaxation in a single-electron GaAs quantum dot
- Optimized electrical control of a Si/SiGe spin qubit in the presence of an induced frequency shift
- Theory of anisotropic exchange in laterally coupled quantum dots
- Phonon-induced electron relaxation in weakly-confined single and coupled quantum dots
- Theory of Single Electron Spin Relaxation in Si/SiGe Lateral Coupled Quantum Dots
- Single, double, and triple quantum dots in Ge/Si nanowires
- Triplet-Singlet Spin Relaxation in Quantum Dots with Spin-Orbit Coupling
- Time Scales of Phonon Induced Decoherence of Semiconductor Spin Qubits
- Longitudinal spin-relaxation of donor-bound electrons in direct bandgap semiconductors
- Oscillatory spin relaxation rates in quantum dots
- Spin relaxation in quantum dots with random spin-orbit coupling
- Formation of Long Single Quantum Dots in High Quality InSb Nanowires Grown by Molecular Beam Epitaxy
- Theory of Spin Relaxation in Two-Electron Lateral Coupled Si/SiGe Quantum Dots
- Optimal geometry of lateral GaAs and Si/SiGe quantum dots for electrical control of spin qubits
- Control of the Two-Electron Exchange Interaction in a Nanowire Double Quantum Dot
- Spin-orbit coupling and electric-dipole spin resonance in a nanowire double quantum dot
- Anisotropic exchange coupling in a nanowire double quantum dot with strong spin-orbit coupling
- G-factor of electrons in gate-defined quantum dots in a strong in-plane magnetic field
- Electric dipole spin resonance at shallow donors in quantum wires
- Spontaneous and resonant lifting of the spin blockade in nanowire quantum dots
- Spin-relaxation anisotropy in a nanowire quantum dot with strong spin-orbit coupling