Giant proximity exchange and valley splitting in transition metal dichalcogenide//(Co, Ni) heterostructures
arXiv:1910.13223 · doi:10.1103/PhysRevB.101.085112
Abstract
We investigate the proximity-induced exchange coupling in transition-metal dichalcogenides (TMDCs), originating from spin injector geometries composed of hexagonal boron-nitride (hBN) and ferromagnetic (FM) cobalt (Co) or nickel (Ni), from first-principles. We employ a minimal tight-binding Hamiltonian that captures the low energy bands of the TMDCs around K and K' valleys, to extract orbital, spin-orbit, and exchange parameters. The TMDC/hBN/FM heterostructure calculations show that due to the hBN buffer layer, the band structure of the TMDC is preserved, with an additional proximity-induced exchange splitting in the bands. We extract proximity exchange parameters in the 1--10 meV range, depending on the FM. The combination of proximity-induced exchange and intrinsic spin-orbit coupling (SOC) of the TMDCs, leads to a valley polarization, translating into magnetic exchange fields of tens of Tesla. The extracted parameters are useful for subsequent exciton calculations of TMDCs in the presence of a hBN/FM spin injector. Our calculated absorption spectra show large splittings for the exciton peaks; in the case of MoS/hBN/Co we find a value of about 8 meV, corresponding to about 50 Tesla external magnetic field in bare TMDCs. The reason lies in the band structure, where a hybridization with Co orbitals causes a giant valence band exchange splitting of more than 10 meV. Structures with Ni do not show any level hybridization features, but still sizeable proximity exchange and exciton peak splittings of around 2 meV are present in the TMDCs.
13 pages, 9 figures, 5 tables
References in corpus (21)
- Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
- Graphene Spintronics
- k.p theory for two-dimensional transition metal dichalcogenide semiconductors
- Magnetic Control of Valley Pseudospin in Monolayer WSe2
- Valley Zeeman Effect in Elementary Optical Excitations of a Monolayer WSe2
- Breaking of valley degeneracy by magnetic field in monolayer MoSe2
- Valley Splitting and Polarization by the Zeeman Effect in Monolayer MoSe2
- Exciton band structure of monolayer MoS2
- Opto-Valleytronic Spin Injection in Monolayer MoS2/Few-Layer Graphene Hybrid Spin Valves
- Controlling the Schottky barrier at MoS2|metal contacts by inserting a BN monolayer
- Large valley splitting in monolayer WS by proximity coupling to an insulating antiferromagnetic substrate
- Nanosecond spin lifetimes in single- and few-layer graphene-hBN heterostructures at room temperature
- Valley Polarization by Spin Injection in a Light-Emitting van der Waals Heterojunction
- Theory of proximity-induced exchange coupling in graphene on hBN/(Co, Ni)
- Optospintronics in graphene via proximity coupling
- Luminescent emission of excited Rydberg excitons from monolayer WSe2
- van der Waals Bonded Co/h-BN Contacts to Ultrathin Black Phosphorus Devices
- Spin-orbit coupling and spin relaxation in phosphorene: Intrinsic versus extrinsic effects
- Large-scale BN tunnel barriers for graphene spintronics
- Spin transport in high-mobility graphene on WS substrate with electric-field tunable proximity spin-orbit interaction
- Excitonic Magneto-Optical Kerr Effect in 2D Transition Metal Dichalcogenides Induced by Spin Proximity