The ampere and the electrical units in the quantum era
arXiv:1910.11310 · doi:10.1016/j.crhy.2019.02.003
Abstract
By fixing two fundamental constants from quantum mechanics, the Planck constant and the elementary charge , the revised Système International (SI) of units endorses explicitly quantum mechanics. This evolution also highlights the importance of this theory which underpins the most accurate realization of the units. From 20 May 2019, the new definitions of the kilogram and of the ampere, based on fixed values of and respectively, will particularly impact the electrical metrology. The Josephson effect (JE) and the quantum Hall effect (QHE), used to maintain voltage and resistance standards with unprecedented reproducibility since 1990, will henceforth provide realizations of the volt and the ohm without the uncertainties inherited from the older electromechanical definitions. More broadly, the revised SI will sustain the exploitation of quantum effects to realize electrical units, to the benefit of end-users. Here, we review the state-of-the-art of these standards and discuss further applications and perspectives.
78 pages, 35 figures
References in corpus (24)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- Room-Temperature Quantum Hall Effect in Graphene
- Anderson Transitions
- High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator
- Quantum Hall Ferromagnetism in Graphene
- Landau Level Splitting in Graphene in High Magnetic Fields
- Precise quantization of anomalous Hall effect near zero magnetic field
- Dissipative Quantum Hall Effect in Graphene near the Dirac Point
- Single-parameter non-adiabatic quantized charge pumping
- Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene
- Measurement of the Planck constant at the National Institute of Standards and Technology from 2015 to 2017
- Quantum Hall resistance standards from graphene grown by chemical vapor deposition on silicon carbide
- Precision comparison of the quantum Hall effect in graphene and gallium arsenide
- Counting statistics for electron capture in a dynamic quantum dot
- Single-parameter quantized charge pumping in high magnetic fields
- Graphene p-n junction Arrays as Quantum-Hall Resistance Standards
- NbSi nanowire quantum-phase-slip circuits: dc supercurrent blockade, microwave measurements and thermal analysis
- Precision quantization of Hall resistance in transferred graphene
- Observation of the quantum Hall effect in epitaxial graphene on SiC(0001) with oxygen adsorption
- Towards a Graphene-Based Quantum Impedance Standard
- Anomalous dissipation mechanism and Hall quantization limit in polycrystalline graphene grown by chemical vapor deposition
- Role of coherence in resistance quantization