Electric selective activation of memristive interfaces in TaO${}_x$-based devices

Abstract

The development of novel devices for neuromorphic computing and non-traditional logic operations largely relies on the fabrication of well controlled memristive systems with functionalities beyond standard bipolar behavior and digital ON-OFF states. In the present work we demonstrate for Ta${}_2$O${}_5$-based devices that it is possible to selectively activate/deactivate two series memristive interfaces in order to obtain clockwise or counter-clockwise multilevel squared remanent resistance loops, just by controlling the (a)symmetry of the applied stimuli and independently of the nature of the used metallic electrodes. Based on our thorough characterization, analysis and modeling, we show that the physical origin of this electrical behavior relies on controlled oxygen vacancies electromigration between three different zones of the active Ta${}_2$O${}_{5-x}$ layer: a central -- bulk -- one and two quasi-symmetric interfaces with reduced TaO${}_{2-h(y)}$ layers. Our devices fabrication process is rather simple as it implies the room temperature deposition of only one CMOS compatible oxide -- Ta-oxide -- and one metal, suggesting that it might be possible to take advantage of these properties at low cost and with easy scability. The tunable opposite remanent resistance loops circulations with multiple -- analogic -- intermediate stable states allows mimicking the adaptable synaptic weight of biological systems and presents potential for non-standard logic devices.

9 pages, 7 figures

References in corpus (6)

• Complementary Resistive Switching in Tantalum Oxide-Based Resistive Memory Devices
• Mechanism for bipolar resistive switching in transition metal oxides
• Resistance profile measurements on a symmetric electrical pulse induced resistance change device
• Graphical analysis of Current-Voltage Characteristics in Typical Memristive Interfaces
• Origin of multistate resistive switching in Ti/manganite/Si$O_x$/Si heterostructures
• Transport mechanism through metal-cobaltite interfaces

Cited by in corpus (3)

• On the key role of oxygen vacancies electromigration in the memristive response of ferroelectric devices
• Oxygen vacancy dynamics in Pt/TiOx/TaOy/Pt memristors: exchange with the environment and internal electromigration
• Multi-mem behavior at reduced voltages in La${}_{1/2}$Sr${}_{1/2}$Mn${}_{1/2}$Co${}_{1/2}$O${}_{3-x}$ perovskite modified with Sm:CeO${}_2$