16 citations · 18 across the 6 of their papers we have counts for
7 papers
Engineering Synaptic Dynamics in Ag-Modified TaO Memristive Devices
R. Leal Martir, W. Quiñonez, A. J. T. van der Ree +4
Engineering not only the magnitude but also the dynamics of synaptic weight updates is an important challenge for memristive neuromorphic hardware. Here, we show that Ag modificati…
Tuning the memristive response of TaO-based devices with Ag Nanoparticles
R. Leal Martir, A. J. T. van der Ree, M. H. Aguirre +3
Defect engineering is a key strategy to control resistive switching (RS) in oxide-based memristive devices, where oxygen vacancy (OV) dynamics governs filament formation and ruptur…
Modeling Memristor-Based Neural Networks with Manhattan Update: Trade-offs in Learning Performance and Energy Consumption
Walter Quiñonez, María José Sánchez, Diego Rubi
We present a systematic study of memristor based neural networks trained with the hardware-friendly Manhattan update rule, focusing on the trade offs between learning performance a…
Synaptic plasticity in Co/Nb:STO memristive devices: The role of oxygen vacancies
Walter Quiñonez, Anouk Goossens, Diego Rubi +2
Neuromorphic computing aims to develop energy-efficient devices that mimic biological synapses. One promising approach involves memristive devices that can dynamically adjust their…
Effect of memristorś potentiation-depression curves peculiarities in the convergence of physical perceptrons
Walter Quiñonez, María José Sánchez, Diego Rubi
Neuromorphic computing aims to emulate the architecture and information processing mechanisms of the mammalian brain. This includes the implementation by hardware of neural network…
Electric selective activation of memristive interfaces in TaO-based devices
C. Ferreyra, M. J. Sánchez, M. Aguirre +5
The development of novel devices for neuromorphic computing and non-traditional logic operations largely relies on the fabrication of well controlled memristive systems with functi…
Non-volatile multilevel resistive switching memory cell: A transition metal oxide-based circuit
P. Stoliar, P. Levy, M. J. Sánchez +7
We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here w…