Wafer-Scale and Deterministic Patterned Growth of Monolayer MoS2 via Vapor-Liquid-Solid Method

Abstract

Vapor transportation is the core process in growing transition-metal dichalcogenides (TMDCs) by chemical vapor deposition (CVD). One inevitable problem is the spatial inhomogeneity of the vapors. The non-stoichiometric supply of transition-metal precursors and chalcogen leads to poor control in products' location, morphology, crystallinity, uniformity and batch to batch reproducibility. While vapor-liquid-solid (VLS) growth involves molten precursors at the growth temperatures higher than their melting points. The liquid sodium molybdate can precipitate solid MoS2 monolayers when saturated with sulfur vapor. Taking advantage of the VLS growth, we achieved three kinds of important achievements: (a) 4-inch-wafer-scale uniform growth of MoS2 flakes on SiO2/Si substrates, (b) 2-inch-wafer-scale growth of continuous MoS2 film with a grain size exceeding 100 um on sapphire substrates, and (c) pattern (site-controlled) growth of MoS2 flakes and film. We clarified that the VLS growth thus pave the new way for the high-efficient, scalable synthesis of two-dimensional TMDC monolayers.

arXiv comment30 pages, 10 figures

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Cited by in corpus (6)

• Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two-Dimensional Electronics
• Mixed-Salt Enhanced Chemical Vapor Deposition of Two-Dimensional Transition Metal Dichalcogenides
• WS${}_2$ Monolayer Integration in a FAPbI${}_3$-based Heterostructure
• One-Dimensional Crystallographic Etching of Few-Layer WS${}_2$
• Electrical transport properties of atomically thin WSe2 using perpendicular magnetic anisotropy metal contacts
• Dissolution-Precipitation Growth of Uniform and Clean Two Dimensional Transition Metal Dichalcogenides