WS Monolayer Integration in a FAPbI-based Heterostructure
arXiv:2404.03802 · doi:10.1063/5.0212268
Abstract
Incorporating a monolayer of WS via interface engineering enhances the overall physical properties of a FAPbI3 perovskite based heterostructure. FAPbI/WS/TiO/ITO and FAPbI/TiO/ITO heterostructures were analyzed by UV-Vis spectroscopy, X-ray diffraction, scanning electron microscopy and atomic force microscopy. The configuration with WS interlayer presents higher absorption in the visible region with a bandgap of {\aprox} 1.44 eV. WS also enhances the deposition process of FAPbI, resulting in the formation of pure photoactive -phase without the non-photoactive -phase nor residual plumbates. The incorporation of the monolayer improves the crystalline structure of the FAPbI, promoting a preferential growth in the [100] direction. The smooth surface of WS favors a homogeneous morphology and an increase of the grain size to ~4.5 m, the largest reported for similar structures. Furthermore, the work function obtained lets us propose an enhance an adequate energy band alignment between FAPbI and the n-type layers for the electron flux to the cathode. These findings strongly suggest that the interfacial coupling of FAPbI/WS could be a promising candidate in photovoltaic applications.
13 pages, 4 figures