Large Anomalous Hall Effect in Topological Insulators with Proximitized Ferromagnetic Insulators
arXiv:1906.02159 · doi:10.1103/PhysRevLett.123.016804
Abstract
We report a proximity-driven large anomalous Hall effect in all-telluride heterostructures consisting of ferromagnetic insulator Cr2Ge2Te6 and topological insulator (Bi,Sb)2Te3. Despite small magnetization in the (Bi,Sb)2Te3 layer, the anomalous Hall conductivity reaches a large value of 0.2e2/h in accord with a ferromagnetic response of the Cr2Ge2Te6. The results show that the exchange coupling between the surface state of the topological insulator and the proximitized Cr2Ge2Te6 layer is effective and strong enough to open the sizable exchange gap in the surface state.
33 pages, 12 figures including supplemental material, accepted by PRL
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Cited by in corpus (12)
- Topological Hall Effect in a Topological Insulator Interfaced with a Magnetic Insulator
- Absence of magnetic-proximity effect at the interface of BiSe and (Bi,Sb)Te with EuS
- Voltage-driven Magnetization Switching via Dirac Magnetic Anisotropy and Spin--orbit Torque in Topological-insulator-based Magnetic Heterostructures
- Suppressing carrier density in (BixSb1-x)2Te3 films using Cr2O3 interfacial layers
- Chemical Migration and Dipole Formation at van der Waals Interfaces between Magnetic Transition Metal Chalcogenides and Topological Insulators
- Voltage-control of damping constant in magnetic-insulator/topological-insulator bilayers
- Topological Insulators-Based Magnetic Heterostructure
- Strong spin-dephasing in a topological insulator - paramagnet heterostructure
- Modulation of Dirac electrons in epitaxial Bi2Se3 ultrathin films on van-der-Waals ferromagnet Cr2Si2Te6
- The anomalous Hall Effect in a Magnetically Extended Topological Insulator Heterostructure
- BiSe thin films heteroepitaxially grown on -RuCl
- Thermoelectric refrigerator based on asymmetric surfaces of a magnetic topological insulator