Electric Switching of the Charge-Density-Wave and Normal Metallic Phases in Tantalum Disulfide Thin-Film Devices

Abstract

We report on switching among three charge-density-wave phases - commensurate, nearly commensurate, incommensurate - and the high-temperature normal metallic phase in thin-film 1T-TaS2 devices induced by application of an in-plane electric field. The electric switching among all phases has been achieved over a wide temperature range, from 77 K to 400 K. The low-frequency electronic noise spectroscopy has been used as an effective tool for monitoring the transitions, particularly the switching from the incommensurate charge-density-wave phase to the normal metal phase. The noise spectral density exhibits sharp increases at the phase transition points, which correspond to the step-like changes in resistivity. Assignment of the phases is consistent with low-field resistivity measurements over the temperature range from 77 K to 600 K. Analysis of the experimental data and calculations of heat dissipation suggest that Joule heating plays a dominant role in the electric-field induced transitions in the tested 1T-TaS2 devices on Si/SiO2 substrates. The possibility of electrical switching among four different phases of 1T-TaS2 is a promising step toward nanoscale device applications. The results also demonstrate the potential of noise spectroscopy for investigating and identifying phase transitions in materials.

arXiv comment32 pages, 7 figures

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Cited by in corpus (16)

• Direct identification of Mott Hubbard band pattern beyond charge density wave superlattice in monolayer 1T-NbSe2
• Two Phonon Interactions and Charge Density Wave in Single Crystalline VSe2 Probed by Raman Spectroscopy
• A time-domain phase diagram of metastable states in a charge ordered quantum material
• Gate- and Light-Tunable Negative Differential Resistance with High Peak Current Density in 1T-TaS${}_2$/2H-MoS${}_2$ T-Junction
• Thermally-Driven Charge-Density-Wave Transitions in 1T-TaS2 Thin-Film Devices: Prospects for GHz Switching Speed
• Depinning of the Charge-Density Waves in Quasi-2D 1T-TaS2 Devices Operating at Room Temperature
• Charge-Density-Wave Devices Printed with the Ink of Chemically Exfoliated 1T-TaS${}_2$ Fillers
• Large optical tunability from charge density waves in 1T-TaS${}_2$ under incoherent illumination
• Current Oscillations in Quasi-2D Charge-Density-Wave 1T-TaS2 Devices: Revisiting the "Narrow Band Noise" Concept
• Machine learning for phase ordering dynamics of charge density waves
• Mott materials: unsuccessful metals with a bright future
• Charge-density-wave resistive switching and voltage oscillations in ternary chalcogenide BaTiS3
• Enhanced Superconductivity and Electron Correlations in Intercalated ZrTe${}_3$
• Extreme anharmonicity and thermal contraction of 1D wires
• Bidirectional ultrafast control of charge density waves via phase competition
• Strain Engineering of Correlated Charge-Ordered Phases in 1T-TaS2