Quantum-Hall to Insulator Transition in Ultra-low-carrier-density Topological Insulator Films and a Hidden Phase of the Zeroth Landau Level

Abstract

A key feature of the topological surface state under a magnetic field is the presence of the zeroth Landau level at the zero energy. Nonetheless, it has been challenging to probe the zeroth Landau level due to large electron-hole puddles smearing its energy landscape. Here, by developing ultra-low-carrier density topological insulator Sb${}_2$Te${}_3$ films, we were able to reach an extreme quantum limit of the topological surface state and uncover a hidden phase at the zeroth Landau level. First, we discovered an unexpected quantum-Hall-to-insulator-transition near the zeroth Landau level. Then, through a detailed scaling analysis, we found that this quantum-Hall-to-insulator-transition belongs to a new universality class, implying that the insulating phase discovered here has a fundamentally different origin from those in non-topological systems.

22 pages, 5 figures, Appendix (28 pages)

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Cited by in corpus (3)

• Structurally and Chemically Compatible BiInSe3 Substrate for Topological Insulator Thin Films
• Suppressing carrier density in (BixSb1-x)2Te3 films using Cr2O3 interfacial layers
• Buffer-layer-controlled Nickeline vs Zinc-Blende/Wurtzite-type MnTe growths on c-plane Al2O3 substrates