Pressure dependence of direct optical transitions in ReS2 and ReSe2

Abstract

We present an experimental and theoretical study of the electronic band structure of ReS2 and ReSe2 at high hydrostatic pressures. The experiments are performed by photoreflectance spectroscopy and are analyzed in terms of ab initio calculations within the density functional theory. Experimental pressure coefficients for the two most dominant excitonic transitions are obtained and compared with those predicted by the calculations. We assign the transitions to the Z k-point of the Brillouin zone and other k-points located away from highsymmetry points. The origin of the pressure coefficients of the measured direct transitions is discussed in terms of orbital analysis of the electronic structure and van der Waals interlayer interaction. The anisotropic optical properties are studied at high pressure by means of polarization-resolved photoreflectance measurements.

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Cited by in corpus (5)

• Visualizing Orbital Content of Electronic Bands in Anisotropic 2D Semiconducting ReSe${}_2$
• Additional excitonic features and momentum-dark states in ReS2
• Two-dimensional ReS2: Solution to the Unresolved Queries on Its Structure and Inter-layer Coupling Leading to Potential Optical Applications
• Interfacial anisotropic exciton-polariton manifolds in ReS${}_2$
• Stress-Tuned Optical Transitions in Layered 1T-MX2 (M= Hf, Zr, Sn; X= S, Se) Crystals