Excitonic emission in van-der-Waals nanotubes of transition metal dichalcogenides
arXiv:1811.01195 · doi:10.1002/andp.201800415
Abstract
Nanotubes (NTs) of transition metal dichalcogenides (TMDs), such as MoS2 and WS2, were first synthesized more than a quarter of a century ago; nevertheless, many of their properties have so far remained basically unknown. This review presents the state of the art in the knowledge of the optical properties of TMD NTs. We first evaluate general properties of multilayered TMD crystals, and analyze available data on electronic band structure and optical properties of related NTs. Then, the technology for the formation and the structural characteristics of TMD NTs are represented, focusing on the structures synthesized by chemical transport reaction. The core of this work is the presentation of the ability of TMD NTs to emit bright photoluminescence (PL), which has been discovered recently. By means of micro-PL spectroscopy of individual tubes we show that excitonic transitions relevant to both direct and indirect band gaps contribute to the emission spectra of the NTs despite the presence of dozens of monolayers in their walls. We highlight the performance of the tubes as efficient optical resonators, whose confined optical modes strongly affect the emission bands. Finally, a brief conclusion is presented, along with an outlook of the future studies of this novel member of the family of radiative NTs, which have unique potential for different nanophotonics applications.
38 pages, 11 fugures, 106 references
References in corpus (22)
- Atomically thin MoS2: A new direct-gap semiconductor
- Bandgap Engineering of Strained Monolayer and Bilayer MoS2
- Excitons in atomically thin transition metal dichalcogenides
- How does quantum confinement influence the electronic structure of transition metal sulfides TmS2
- Local strain engineering in atomically thin MoS2
- Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2
- Large-scale quantum-emitter arrays in atomically thin semiconductors
- Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2
- Electronic and optical properties of strained graphene and other strained 2D materials: a review
- Strain engineering in semiconducting two-dimensional crystals
- Shear and Layer Breathing Modes in Multilayer MoS2
- Photocarrier relaxation in two-dimensional semiconductors
- Exciton Radiative Lifetime in Transition Metal Dichalcogenide Monolayers
- Effect of spin-orbit interaction on the excitonic effects in single-layer, double-layer, and bulk MoS2
- Photon Antibunching in the Photoluminescence Spectra of a Single Carbon Nanotube
- Optical imaging of strain in two-dimensional crystals
- Dark excitons in transition metal dichalcogenides
- Electromechanics in MoS2 and WS2: nanotubes vs. monolayers
- Raman Signatures of Polytypism in Molybdenum Disulfide
- Synthesized multiwall MoS2 nanotube and nanoribbon field-effect transistors
- Optical microcavity with semiconducting single-wall carbon nanotubes
- Substrate engineering for high quality emission of free and localized excitons from atomic monolayers in hybrid architectures
Cited by in corpus (5)
- Dark trions govern the temperature-dependent optical absorption and emission of doped atomically thin semiconductors
- Photoluminescence from Single-Walled MoS Nanotubes Coaxially Grown on Boron Nitride Nanotubes
- Indirect-to-direct band gap crossover of single walled MoS nanotubes
- MoS flake as a van der Waals homostructure: luminescence properties and optical anisotropy
- Photoluminescence kinetics of dark and bright excitons in atomically thin MoS