Mechanism of Néel order switching in antiferromagnetic thin films revealed by magnetotransport and direct imaging
arXiv:1810.11326 · doi:10.1103/PhysRevLett.123.177201
Abstract
We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We observe switching of more than one third of the antiferromagnetic domains by the application of current pulses. Our data reveal two different magnetic switching mechanisms leading together to an efficient switching, namely the spin-current induced effective magnetic anisotropy variation and the action of the spin torque on the DWs.
arXiv comment26 pages, including supplementary material
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- Scaling the electrical current switching of exchange bias in fully-epitaxial antiferromagnet/ferromagnet bilayers
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- Gating effects in antiferromagnetic CuMnAs
- Geometric phase and a nonreciprocal spin wave circular polarizer
- Current-induced in-plane magnetization switching in biaxial ferrimagnetic insulator
- Disentangling electrical switching of antiferromagnetic NiO using high magnetic fields
- Vortex propagation and phase transitions in a chiral antiferromagnetic nanostripe
- Collective spin dynamics under dissipative spin Hall torque
- First-principles calculations of spin-orbit torques in MnAu/heavy-metal bilayers
- Electrical switching of antiferromagnetic CoO | Pt across the Néel temperature