Magnetic sensitivity distribution of Hall devices in antiferromagnetic switching experiments

Abstract

We analyze the complex impact of the local magnetic spin texture on the transverse Hall-type voltage in device structures utilized to measure magnetoresistance effects. We find a highly localized and asymmetric magnetic sensitivity in the eight-terminal geometries that are frequently used in current-induced switching experiments, for instance to probe antiferromagnetic materials. Using current-induced switching of antiferromagnetic NiO/Pt as an example, we estimate the change in the spin Hall magnetoresistance signal associated with switching events based on the domain switching patterns observed via direct imaging. This estimate correlates with the actual electrical data after subtraction of a non-magnetic contribution. Here, the consistency of the correlation across three measurement geometries with fundamentally different switching patterns strongly indicates a magnetic origin of the measured and analyzed electrical signals.

References in corpus (20)

• Antiferromagnetic spintronics
• Electrical switching of an antiferromagnet
• Writing and Reading antiferromagnetic Mn${}_2$Au: Néel spin-orbit torques and large anisotropic magnetoresistance
• Antidamping torque-induced switching in biaxial antiferromagnetic insulators
• Negative spin Hall magnetoresistance of Pt on the bulk easy-plane antiferromagnet NiO
• Mechanism of Néel order switching in antiferromagnetic thin films revealed by magnetotransport and direct imaging
• Electrical Switching of Tristate Antiferromagnetic Néel Order in $\alpha$-Fe${}_2$O${}_3$ Epitaxial Films
• Full angular dependence of the spin Hall and ordinary magnetoresistance in epitaxial antiferromagnetic NiO(001)/Pt thin films
• Quantitative Study on Current-Induced Effect in an Antiferromagnet Insulator/Pt Bilayer Film
• Direct imaging of current-induced antiferromagnetic switching revealing a pure thermomagnetoelastic switching mechanism
• Spin Seebeck imaging of spin-torque switching in antiferromagnetic Pt/NiO heterostructures
• Imaging Antiferromagnetic Domains in Nickel-oxide Thin Films by Magneto-optical Voigt Effect
• Efficient spin torques in antiferromagnetic CoO/Pt quantified by comparing field- and current- induced switching
• Observation of current-induced switching in non-collinear antiferromagnetic IrMn${}_3$ by differential voltage measurements
• Identification of Néel vector orientation in antiferromagnetic domains switched by currents in NiO/Pt thin films
• Concurrent magneto-optical imaging and magneto-transport readout of electrical switching of insulating antiferromagnetic thin films
• Direct Imaging of Electrical Switching of Antiferromagnetic Néel Order in $\alpha$-Fe${}_2$O${}_3$ Epitaxial Films
• Resistive contribution in electrical switching experiments with antiferromagnets
• Optical imaging of antiferromagnetic domains in ultrathin CoO(001) films
• Systematic study of nonmagnetic resistance changes due to electrical pulsing in single metal layers and metal/antiferromagnet bilayers

Cited by in corpus (2)

• Antiferromagnetic insulatronics: spintronics in insulating 3d metal oxides with antiferromagnetic coupling
• Interaction and collision of skyrmions in chiral antiferromagnets