Characterisation of SiPMs

Abstract

Silicon photomultipliers, thanks to their excellent performance, robustness and relatively simple use, are the photon-detectors of choice for many present and future applications. This paper gives an overview of methods to characterise SiPMs. The different SiPM parameters are introduced and generic setups for their determination presented. Finally, ways to extract the parameters from the measurements are discussed and the results shown. If a parameter can be obtained from different measurements, the results are compared and recommendations given, which is considered to be the most reliable. The characterisation of SiPMs, in particular for high light intensities and in high radiation fields, is presently a field of intensive research with many open questions and problems which will be discussed.

33 pages, 27 figures, Review paper

References in corpus (3)

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• Locating the avalanche structure and the origin of breakdown generating charge carriers in silicon photomultipliers by using the bias dependent breakdown probability

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