Analysis methods for highly radiation-damaged SiPMs

Abstract

Prototype SiPMs with 4384 pixels of dimensions $15\times 15\mu$m${}^2$ produced by KETEK have been irradiated with reactor neutrons to eight fluences between $10^9$ and $5\times 10^{14}$ cm${}^{-2}$. For temperatures between $-30{}^{\circ }$C and $+30{}^{\circ }$C capacitance-voltage, admittance-frequency, current-forward voltage, current-reverse voltage and charge-voltage measurements with and without illumination by a sub-nanosecond laser have been performed. The data have been analysed using different methods in order to extract the dependence on neutron fluence and temperature of the electrical parameters, the breakdown oltage, the activation energy for the current generation, the dark-count rate and the response to light pulses. The results from the different analysis methods are compared.

arXiv comment11 pages, 6 Figures, Talk presented by R. Klanner at the 15th Vienna Conference on Instrumentation, Vienna, Feb. 18th-22nd, 2019

References in corpus (6)

• Radiation damage of SiPMs
• Characterisation of SiPMs
• Analytical models of probability distribution and excess noise factor of Solid State Photomultiplier signals with crosstalk
• Study of the breakdown voltage of SiPMs
• On the characterisation of SiPMs from pulse-height spectra
• Neutron irradiation effect on SiPMs up to ${\Phi }_{neq}$ = 5 $\times$ 10${}^{14}$ cm${}^{-2}$

Cited by in corpus (2)

• Radiation damage assessment of SensL SiPMs
• Characterisation of SiPM radiation hardness for application in hadron calorimeters at FAIR, CERN and NICA