Neutron irradiation effect on SiPMs up to ${\Phi }_{neq}$ = 5 $\times$ 10${}^{14}$ cm${}^{-2}$

Abstract

Silicon Photo-Multipliers (SiPM) are becoming the photo-detector of choice for increasingly more particle detection applications, from fundamental physics to medical and societal applications. One major consideration for their use at high-luminosity colliders is the radiation damage induced by hadrons, which leads to a dramatic increase of the dark count rate. KETEK SiPMs have been exposed to various fluences of reactor neutrons up to ${\Phi }_{neq}$ = 5$\times$10${}^{14}$ cm${}^{-2}$ (1 MeV equivalent neutrons). Results from the I-V, and C-V measurements for temperatures between $-$30${}^{\circ }$C and $+$30${}^{\circ }$C are presented. We propose a new method to quantify the effect of radiation damage on the SiPM performance. Using the measured dark current the single pixel occupation probability as a function of temperature and excess voltage is determined. From the pixel occupation probability the operating conditions for given requirements can be optimized. The method is qualitatively verified using current measurements with the SiPM illuminated by blue LED light.

References in corpus (2)

• Study of the breakdown voltage of SiPMs
• Characterisation of highly radiation-damaged SiPMs using current measurements

Cited by in corpus (6)

• Radiation damage of SiPMs
• Characterisation of SiPMs
• Single photon detection with SiPMs irradiated up to 10${}^{14}$ cm${}^{-2}$ 1-MeV-equivalent neutron fluence
• Irradiation and performance of RGB-HD Silicon Photomultipliers for calorimetric applications
• Analysis methods for highly radiation-damaged SiPMs
• Effect of increased DCR on the detection of minimum-ionizing particles with SiPMs