Radiation Hardness of a Wide Spectral Range SiPM with Quasi-Spherical Junction
arXiv:2209.07785 · doi:10.1016/j.nima.2022.167792
Abstract
New pixel geometries are on the rise to achieve high sensitivity in near-infrared wavelengths with silicon photomultipliers (SiPMs). We test prototypes of the tip avalanche photo-diodes, which feature a quasi-spherical p-n junction and a high photodetection efficiency over a wide spectral range, and analyze the performance after neutron irradiation. The observed increase in dark count rate is significantly smaller than for a SiPM with a conventional design, indicating a good radiation hardness of the pixel geometry.
arXiv comment8 pages, 7 figures. Submitted to NIM Proceedings. This work was presented at the NDIP20 conference
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