Field-free spin-orbit torque switching from geometrical domain wall pinning
arXiv:1807.06287 · doi:10.1021/acs.nanolett.8b00773
Abstract
Spin-orbit torques, which utilize spin currents arising from the spin-orbit coupling, offer a novel method to electrically switch the magnetization with perpendicular anisotropy. However, the necessity of an external magnetic field to achieve a deterministic switching is an obstacle for realizing practical spin-orbit torque devices with all-electric operation. Here, we report a field-free spin-orbit torque switching by exploiting the domain wall motion in an anti-notched microwire with perpendicular anisotropy, which exhibits multi-domain states stabilized by the domain wall surface tension. The combination of spin-orbit torque, Dzyaloshinskii-Moriya interaction, and domain wall surface tension induced geometrical pinning allows a deterministic control of the domain wall and offers a novel method to achieve a field-free spin-orbit torque switching. Our work demonstrates the proof of concept of a perpendicular memory cell which can be readily adopted in a three-terminal magnetic memory.
arXiv comment19 pages, 5 figures
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- Field-free spin-orbit-torque switching of perpendicular magnetization aided by uniaxial shape anisotropy
- Deterministic Field-free Switching of a Perpendicularly Magnetized Ferromagnetic Layer via the Joint Effects of Dzyaloshinskii-Moriya Interaction and Field-like Spin-orbit Torque: An Appraisal
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- Toggle Spin-Orbit Torque MRAM with Perpendicular Magnetic Anisotropy
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