Effect of annealing on the interfacial Dzyaloshinskii-Moriya interaction in Ta/CoFeB/MgO trilayers
arXiv:1607.06405 · doi:10.1063/1.4963731
Abstract
The interfacial Dzyaloshinskii-Moriya interaction (DMI) has been shown to stabilize homochiral Néel-type domain walls in thin films with perpendicular magnetic anisotropy and as a result permit them to be propagated by a spin Hall torque. In this study, we demonstrate that in Ta/CoFeB/MgO the DMI may be influenced by annealing. We find that the DMI peaks at mJ/m at an annealing temperature of 230 C. DMI fields were measured using a purely field-driven creep regime domain expansion technique. The DMI field and the anisotropy field follow a similar trend as a function of annealing temperature. We infer that the behavior of the DMI and the anisotropy are related to interfacial crystal ordering and B expulsion out of the CoFeB layer as the annealing temperature is increased.
5 pages and 4 figures
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Cited by in corpus (7)
- Investigation of the Dzyaloshinskii-Moriya interaction and room temperature skyrmions in W/CoFeB/MgO thin films and microwires
- Intrinsic mixed Bloch-Néel character and chirality switch of skyrmions in asymmetric epitaxial trilayer
- Driving skyrmions with low threshold current density in Pt/CoFeB thin film
- Spin orbit torque-driven motion of quasi-Bloch domain wall in perpendicularly magnetized W/CoFeB/MgO structure
- Dzyaloshinskii-Moriya interaction in strongly spin-orbit-coupled systems: General formula and application to topological and Rashba materials
- Stabilized biskyrmion states in annealed CoFeB bilayer with different interfaces
- Oscillatory spin-orbit torque switching induced by field-like torques