Strongly inhomogeneous distribution of spectral properties of silicon-vacancy color centers in nanodiamonds

Abstract

The silicon-vacancy (SiV) color center in diamond is a solid-state single photon emitter and spin quantum bit suited as a component in quantum devices. Here, we show that the SiV center in nanodiamond exhibits a strongly inhomogeneous distribution with regard to the center wavelengths and linewidths of the zero-phonon-line (ZPL) emission at room temperature. We find that the SiV centers separate in two clusters: one group exhibits ZPLs with center wavelengths within a narrow range of approximatly 730 nm to 742 nm and broad linewidths between 5 nm and 17 nm, whereas the second group comprises a very broad distribution of center wavelengths between 715 nm and 835 nm, but narrow linewidths from below 1 nm up to 4 nm. Supported by ab initio Kohn-Sham density functional theory calculations we show that the ZPL shifts of the first group are consistently explained by strain in the diamond lattice. Further, we suggest, that the second group showing the strongly inhomogeneous distribution of center wavelengths might be comprised of modified SiV centers. Whereas single photon emission is demonstrated for SiV centers of both clusters, we show that emitters from different clusters show different spectroscopic features such as variations of the phonon sideband spectra and different blinking dynamics.

References in corpus (28)

• Single-Photon Switching and Entanglement of Solid-State Qubits in an Integrated Nanophotonic System
• Indistinguishable photons from separated silicon-vacancy centers in diamond
• Silicon-Vacancy Spin Qubit in Diamond: A Quantum Memory Exceeding 10 ms with Single-Shot State Readout
• Single photon emission from silicon-vacancy centres in CVD-nano-diamonds on iridium
• The electronic structure of the silicon vacancy color center in diamond
• Theory of Spin-Conserving Excitation of the $N-V^{-}$ Center in Diamond
• Multiple intrinsically identical single photon emitters in the solid-state
• Strain engineering of the silicon-vacancy center in diamond
• All-optical initialization, readout, and coherent preparation of single silicon-vacancy spins in diamond
• Electron-phonon processes of the silicon-vacancy centre in diamond
• Electronic structure of the negatively-charged silicon-vacancy center in diamond
• Scalable Focused Ion Beam Creation of Nearly Lifetime-Limited Single Quantum Emitters in Diamond Nanostructures
• {\emph{Ab initio} magneto-optical spectrum of Group-IV -- Vacancy color centers in diamond
• An \emph{ab initio} study on split silicon-vacancy defect in diamond: electronic structure and related properties
• Photophysics of single silicon vacancy centers in diamond: implications for single photon emission
• All-optical control of the silicon-vacancy spin in diamond at millikelvin temperatures
• Narrowband fluorescent nanodiamonds produced from chemical vapor deposition films
• Cavity-enhanced single photon source based on the silicon vacancy center in diamond
• A scanning probe-based pick-and-place procedure for assembly of integrated quantum optical hybrid devices
• Nanodiamonds carrying quantum emitters with almost lifetime-limited linewidths
• Fluorescence and polarization spectroscopy of single silicon vacancy centers in heteroepitaxial nanodiamonds on iridium
• Nanodiamonds with silicon vacancy defects for non-toxic photostable fluorescent labeling of neural precursor cells
• Coherence properties and quantum control of silicon vacancy color centers in diamond
• Narrow-band single photon emission at room temperature based on a single Nitrogen-vacancy center coupled to an all-fiber-cavity
• Photoluminescence excitation and spectral hole burning spectroscopy of silicon vacancy centers in diamond
• Vibrational modes of negatively charged silicon-vacancy centers in diamond from ab initio calculations
• Spectral tunability of a plasmonic antenna with a dielectric nanocrystal
• Photo-induced blinking in a solid state quantum system

Cited by in corpus (18)

• Spectroscopic Investigations of Negatively Charged Tin-Vacancy Centres in Diamond
• Detection of single W-centers in silicon
• Integrated Single Photon Emitters
• Hidden Silicon-Vacancy Centers in Diamond
• Spectroscopic Signatures of Electron-Phonon Coupling in Silicon-Vacancy Centers in Diamond
• Single germanium vacancy centres in nanodiamonds with bulk-like spectral stability
• All-optical nanoscale thermometry based on silicon-vacancy centers in detonation nanodiamonds
• Cryogenic platform for coupling color centers in diamond membranes to a fiberbased microcavity
• Versatile Direct Writing of Dopants in a Solid State Host Through Recoil Implantation
• Optical properties of SiV and GeV color centers in nanodiamonds under hydrostatic pressures up to 180 GPa
• All-Optical Spin Initialization via a Cavity Broadened Optical Transition in On-Chip Hybrid Quantum Photonics
• Divergent effects of laser irradiation on ensembles of nitrogen-vacancy centers in bulk and nano-diamonds: implications for biosensing
• The impact of strain on the GeV-color center in diamond
• Selective acoustic control of photon-mediated qubit-qubit interactions
• First-order coherence of light emission from inhomogeneously broadened mesoscopic ensembles
• Characterization of single photon sources for radiometry applications at room temperature
• Modeling the Zero-Phonon Line of Strained SnV Centers in Diamond; Including Reflections on Computational Cost and Accuracy
• Nanoscale graphitization and defect evolution in silicon-vacancy center-containing nanodiamonds under high-pressure high-temperature annealing