Growth and Structure of Singly-Oriented Single-Layer Tungsten Disulfide on Au(111)

Abstract

We present a complete characterisation at the nanoscale of the growth and structure of single-layer tungsten disulfide (WS${}_2$) epitaxially grown on Au(111). Following the growth process in real time with fast x-ray photoelectron spectroscopy, we obtain a singly-oriented layer by choosing the proper W evaporation rate and substrate temperature during the growth. Information about the morphology, size and layer stacking of the WS${}_2$ layer were achieved by employing x-ray photoelectron diffraction and low-energy electron microscopy. The strong spin splitting in the valence band of WS${}_2$ coupled with the single-orientation character of the layer make this material the ideal candidate for the exploitation of the spin and valley degrees of freedom.

6 figures, 1 supplementary material PDF file

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Cited by in corpus (6)

• Epitaxial Growth of 2D Layered Transition Metal Dichalcogenides
• In-situ exfoliation method of large-area 2D materials
• Larger than 80% Valley Polarization of Free Carriers in Singly-Oriented Single Layer WS${}_2$ on Au(111)
• Microscopic mechanism of van der Waals heteroepitaxy in the formation of MoS2/hBN vertical heterostructures
• Phase engineering in tantalum sulfide monolayers on Au(111)
• Probing the Atomic Arrangement of Sub-Surface Dopants in a Silicon Quantum Device Platform