21 citations · 21 across the 2 of their papers we have counts for
6 papers
Identifying the mechanism of single-domain single-layer MoS2 growth on Au(111)
Moritz Ewert, Lars Buß, Jeppe V. Lauritsen +2
The nucleation and growth of single-layer molybdenum disulfide single domain islands is investigated by in situ low-energy electron microscopy. We study the growth of micron-sized…
Massively strained VO2 thin film growth on RuO2
Simon Fischer, Jon-Olaf Krisponeit, Michael Foerster +3
Strain engineering vanadium dioxide thin films is one way to alter this material's characteristic first order transition from semiconductor to metal. In this study we extend the ex…
Going beyond copper: wafer-scale synthesis of graphene on sapphire
N. Mishra, S. Forti, F. Fabbri +13
The adoption of graphene in electronics, optoelectronics and photonics is hindered by the difficulty in obtaining high quality material on technologically-relevant substrates, over…
Growth and Structure of Singly-Oriented Single-Layer Tungsten Disulfide on Au(111)
Luca Bignardi, Daniel Lizzit, Harsh Bana +14
We present a complete characterisation at the nanoscale of the growth and structure of single-layer tungsten disulfide (WS) epitaxially grown on Au(111). Following the growth p…
Morphology and chemical composition of cobalt germanide islands on Ge(001): in-situ nanoscale insights into contact formation for Ge-based device technology
M. Ewert, Th. Schmidt, J. I. Flege +7
The reactive growth of cobalt germanide on Ge(001) was investigated by means of in-situ x-ray absorption spectroscopy photoemission electron microscopy (XAS-PEEM), micro-illuminati…
Adsorbate-Mediated Growth of Rare-Earth Oxides on Silicon
Björn Kaemena, Jan Ingo Flege, Jens Falta
Ultrathin cerium oxide films have been deposited on chlorine, gallium, and silver passivated Si(111) by reactive molecular beam epitaxy in a comparative study. The crystallinity of…