Tunable Doping in Hydrogenated Single Layered Molybdenum Disulfide

Abstract

Structural defects in the molybdenum disulfide (MoS2) monolayer are widely known for strongly altering its properties. Therefore, a deep understanding of these structural defects and how they affect MoS2 electronic properties is of fundamental importance. Here, we report on the incorporation of atomic hydrogen in mono-layered MoS2 to tune its structural defects. We demonstrate that the electronic properties of single layer MoS2 can be tuned from the intrinsic electron (n) to hole (p) doping via controlled exposure to atomic hydrogen at room temperature. Moreover, this hydrogenation process represents a viable technique to completely saturate the sulfur vacancies present in the MoS2 flakes. The successful incorporation of hydrogen in MoS2 leads to the modification of the electronic properties as evidenced by high resolution X-ray photoemission spectroscopy and density functional theory calculations. Micro-Raman spectroscopy and angle resolved photoemission spectroscopy measurements show the high quality of the hydrogenated MoS2 confirming the efficiency of our hydrogenation process. These results demonstrate that the MoS2 hydrogenation could be a significant and efficient way to achieve tunable doping of transition metal dichalcogenides (TMD) materials with non-TMD elements.

15 pages, 6 figures + SI 3 pages 3 figures. Pre-print published with the authorization of ACS Publications

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• Phase Transition in a Memristive Suspended MoS2 Monolayer Probed by Opto- and Electro-Mechanics
• Intricate modulation of interlayer coupling at GO/MoSe2 interface: application in time-dependent optics and device transport
• Unidirectional Rashba Spin Splitting in Single Layer WS${}_{2(1-x)}$Se${}_{2x}$ alloy
• Electronic structure of 2D van der Waals crystals and heterostructures investigated by spatially- and angle-resolved photoemission
• Interstitially bridged van der Waals interface enabling stacking-fault-free, layer-by-layer epitaxy
• Excited states in hydrogenated single-layer MoS${}_2$
• Indirect to direct band gap crossover in two-dimensional WS2(1-x)Se2x alloys