Raman Scattering as a Selective Probe of Chiral Electronic Excitations in Bilayer Graphene

Abstract

We report a symmetry resolved electronic Raman scattering (ERS) study of a bilayer graphene device under gate voltage. We show that the ERS continuum is dominated by interband chiral excitations of $A_2$ symmetry and displays a characteristic Pauli-blocking behavior similar to the monolayer case. Crucially, we show that non-chiral excitations make a vanishing contribution to the Raman cross-section due to destructive interference effects in the Raman amplitude matrix elements. This is in a marked contrast to optical absorption measurements and opens interesting venues for the use of Raman scattering as a selective probe of chiral degrees of freedom in topological matter and other 2D crystals.

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Cited by in corpus (7)

• Hidden Wave Function of Twisted Bilayer Graphene: Flat Band as a Landau Level
• Electronic Raman Scattering in Twistronic Few-Layer Graphene
• Spectroscopic Signatures of Electronic Excitations in Raman Scattering in Thin Films of Rhombohedral Graphite
• Effect of topology on quasi-particle interactions in the Weyl semimetal WP${}_2$
• Identification of graphite with perfect rhombohedral stacking by electronic Raman scattering
• Chiral electronic excitations and strong electron-phonon coupling to Weyl fermions in the Kagome semimetal Co${}_3$Sn${}_2$S${}_2$
• Electronic Raman scattering from 2D metals with broken inversion symmetry