The role of surface chemical reactivity in the stability of electronic nanodevices based on two-dimensional materials "beyond graphene" and topological insulators
arXiv:1805.00729 · doi:10.1016/j.flatc.2016.11.003
Abstract
Here, we examine the influence of surface chemical reactivity toward ambient gases on the performance of nanodevices based on two-dimensional materials "beyond graphene" and novel topological phases of matter. While surface oxidation in ambient conditions was observed for silicene and phosphorene with subsequent reduction of the mobility of charge carriers, nanodevices with active channels of indium selenide, bismuth chalcogenides and transition-metal dichalcogenides are stable in air. However, air-exposed indium selenide suffers of p-type doping due to water decomposition on Se vacancies, whereas the low mobility of charge carriers in transition-metal dichalcogenides increases the response time of nanodevices. Conversely, bismuth chalcogenides require a control of crystalline quality, which could represent a serious hurdle for up scaling.
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