Topology driven g-factor tuning in type-II quantum dots

Abstract

We investigate how the voltage control of the exciton lateral dipole moment induces a transition from singly to doubly connected topology in type II InAs/GaAsSb quantum dots. The latter causes visible Aharonov-Bohm oscillations and a change of the exciton g-factor which are modulated by the applied bias. The results are explained in the frame of realistic $\mathbf{k}\cdot \mathbf{p}$ and effective Hamiltonian models and could open a venue for new spin quantum memories beyond the InAs/GaAs realm.

Final Version

References in corpus (13)

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Cited by in corpus (4)

• Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix
• On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP(001)
• Excitonic fine structure of epitaxial Cd(Se,Te) on ZnTe type-II quantum dots
• Spin dependent analysis of homogeneous and inhomogeneous exciton decoherence in magnetic fields