Imaging resonant dissipation from individual atomic defects in graphene
arXiv:1710.01486 · doi:10.1126/science.aan0877
Abstract
Conversion of electric current into heat involves microscopic processes that operate on nanometer length-scales and release minute amounts of power. While central to our understanding of the electrical properties of materials, individual mediators of energy dissipation have so far eluded direct observation. Using scanning nano-thermometry with sub-micro K sensitivity we visualize and control phonon emission from individual atomic defects in graphene. The inferred electron-phonon 'cooling power spectrum' exhibits sharp peaks when the Fermi level comes into resonance with electronic quasi-bound states at such defects, a hitherto uncharted process. Rare in the bulk but abundant at graphene's edges, switchable atomic-scale phonon emitters define the dominant dissipation mechanism. Our work offers new insights for addressing key materials challenges in modern electronics and engineering dissipation at the nanoscale.
References in corpus (10)
- The electronic properties of graphene
- Boron nitride substrates for high-quality graphene electronics
- Micrometer-scale ballistic transport in encapsulated graphene at room temperature
- Hydrogen on graphene: Electronic structure, total energy, structural distortions, and magnetism from first-principles calculations
- Atomic-scale control of graphene magnetism using hydrogen atoms
- Disorder Induced Localized States in Graphene
- On resonant scatterers as a factor limiting carrier mobility in graphene
- Monovalent impurities on graphene: midgap states and migration barriers
- Long-Range Interaction Between Adatoms in Graphene
- Edge currents shunt the insulating bulk in gapped graphene