Electron-Hole Symmetry Breaking in Charge Transport in Nitrogen-Doped Graphene
arXiv:1705.01429 · doi:10.1021/acsnano.7b00313
Abstract
Graphitic nitrogen-doped graphene is an excellent platform to study scattering processes of massless Dirac fermions by charged impurities, in which high mobility can be preserved due to the absence of lattice defects through direct substitution of carbon atoms in the graphene lattice by nitrogen atoms. In this work, we report on electrical and magnetotransport measurements of high-quality graphitic nitrogen-doped graphene. We show that the substitutional nitrogen dopants in graphene introduce atomically sharp scatters for electrons but long-range Coulomb scatters for holes and, thus, graphitic nitrogen-doped graphene exhibits clear electron-hole asymmetry in transport properties. Dominant scattering processes of charge carriers in graphitic nitrogen-doped graphene are analyzed. It is shown that the electron-hole asymmetry originates from a distinct difference in intervalley scattering of electrons and holes. We have also carried out the magnetotransport measurements of graphitic nitrogen-doped graphene at different temperatures and the temperature dependences of intervalley scattering, intravalley scattering and phase coherent scattering rates are extracted and discussed. Our results provide an evidence for the electron-hole asymmetry in the intervalley scattering induced by substitutional nitrogen dopants in graphene and shine a light on versatile and potential applications of graphitic nitrogen-doped graphene in electronic and valleytronic devices.
35 pages, 5 figures
References in corpus (27)
- Electric Field Effect in Atomically Thin Carbon Films
- Two-Dimensional Gas of Massless Dirac Fermions in Graphene
- Graphene: Status and Prospects
- Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
- Detection of Individual Gas Molecules Absorbed on Graphene
- Charged Impurity Scattering in Graphene
- A self-consistent theory for graphene transport
- Temperature dependent transport in suspended graphene
- Measurement of Scattering Rate and Minimum Conductivity in Graphene
- Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric
- Weak localisation magnetoresistance and valley symmetry in graphene
- Strong suppression of weak (anti)localization in graphene
- Visualizing Individual Nitrogen Dopants in Monolayer Graphene
- Defect scattering in graphene
- Weak localisation in graphene flakes
- Marginal Fermi liquid behavior from 2d Coulomb interaction
- Weak antilocalization in epitaxial graphene: evidence for chiral electrons
- Nitrogen-Doped Graphene Sheets Grown by Chemical Vapor Deposition: Synthesis and Influence of Nitrogen Impurities on Carrier Transport
- Localized state and charge transfer in nitrogen-doped graphene
- Numbers of donors and acceptors from transport measurements in graphene
- Inelastic scattering in a monolayer graphene sheet; a weak-localization study
- Quantum-Hall activation gaps in graphene
- Weak localization scattering lengths in epitaxial, and CVD graphene
- Absence of a transport signature of spin-orbit coupling in graphene with indium adatoms
- Uncovering the Dominant Scatterer in Graphene Sheets on SiO2
- The shape of disorder broadened Landau subbands in graphene
- Electrical control of intervalley scattering in graphene via the charge state of defects
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- Weak localization measurements of electronic scattering rates in Li-doped epitaxial graphene