Characterization of Traps at Nitrided SiO${}_2$/SiC Interfaces near the Conduction Band Edge by using Hall Effect Measurements

Abstract

The effects of nitridation on the density of traps at SiO${}_2$/SiC interfaces near the conduction band edge were qualitatively examined by a simple, newly developed characterization method that utilizes Hall effect measurements and split capacitance-voltage measurements. The results showed a significant reduction in the density of interface traps near the conduction band edge by nitridation, as well as the high density of interface traps that was not eliminated by nitridation.

References in corpus (1)

• Characterization of Interface Traps in SiO${}_2$/SiC Structures Close to the Conduction Band by Deep-Level Transient Spectroscopy

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