134 citations · 168 across the 3 of their papers we have counts for
3 papers
Dipole Scattering at the Interface: The Origin of Low Mobility observed in SiC MOSFETs
Tetsuo Hatakeyama, Hirohisa Hirai, Mitsuru Simetani +3
In this work, the origin of the low free electron mobility in SiC MOSFETs is investigated using the scattering theory of two-dimensional electron gases. We first establish that nei…
Characterization of Traps at Nitrided SiO/SiC Interfaces near the Conduction Band Edge by using Hall Effect Measurements
Tetsuo Hatakeyama, Yuji Kiuchi, Mitsuru Sometani +5
The effects of nitridation on the density of traps at SiO/SiC interfaces near the conduction band edge were qualitatively examined by a simple, newly developed characterization…
Characterization of Interface Traps in SiO/SiC Structures Close to the Conduction Band by Deep-Level Transient Spectroscopy
Tetsuo Hatakeyama, Mitsuru Sometani, Yoshiyuki Yonezawa +3
The effects of the oxidation atmosphere and crystal faces on the interface-trap density was examined by using constant-capacitance deep-level transient spectroscopy to clarify the…