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20142022
most citedCharacterization of Traps at Nitrided SiO/SiC Interfaces near the Conduction Band Edge by using Hall Effect Measurements

134 citations · 168 across the 3 of their papers we have counts for

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cond-mat.mtrl-sci2014★ 16 cited

Characterization of Interface Traps in SiO/SiC Structures Close to the Conduction Band by Deep-Level Transient Spectroscopy

Tetsuo Hatakeyama, Mitsuru Sometani, Yoshiyuki Yonezawa +3

The effects of the oxidation atmosphere and crystal faces on the interface-trap density was examined by using constant-capacitance deep-level transient spectroscopy to clarify the…