A novel intrinsic interface state controlled by atomic stacking sequence at interfaces of SiC/SiO${}_2$

Abstract

On the basis of ab-initio total-energy electronic-structure calculations, we find that interface localized electron states at the SiC/SiO${}_2$ interface emerge in the energy region between 0.3 eV below and 1.2 eV above the bulk conduction-band minimum (CBM) of SiC, being sensitive to the sequence of atomic bilayers in SiC near the interface. These new interface states unrecognized in the past are due to the peculiar characteristics of the CBM states which are distributed along the crystallographic channels. We also find that the electron doping modifies the energetics among the different stacking structures. Implication for performance of electron devices fabricated on different SiC surfaces are discussed.

arXiv comment5 pages, 4 figures

References in corpus (4)

• Characterization of Traps at Nitrided SiO${}_2$/SiC Interfaces near the Conduction Band Edge by using Hall Effect Measurements
• Comparative study of hybrid functionals applied to structural and electronic properties of semiconductors and insulators
• Interstitial Channels that Control Band Gaps and Effective Masses in Tetrahedrally Bonded Semiconductors
• Comprehensive study on band-gap variations in $s{p}^3$-bonded semiconductors: roles of electronic states floating in internal space

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• Structure and energetics of carbon-related defects in SiC (0001)/SiO${}_2$ systems revealed by first-principles calculations: Defects in SiC, SiO${}_2$, and just at their interface
• Atomic scale localization of Kohn-Sham wavefunction at SiO2/4H-SiC interface under electric field, deviating from envelope function by effective mass approximation
• Effect of nitrogen introduced at the SiC/SiO${}_2$ interface and SiC side on the electronic states by first-principles calculation