18 citations · 18 across the 1 of their papers we have counts for
2 papers
physics.app-ph2022★ 18 cited
Dipole Scattering at the Interface: The Origin of Low Mobility observed in SiC MOSFETs
Tetsuo Hatakeyama, Hirohisa Hirai, Mitsuru Simetani +3
In this work, the origin of the low free electron mobility in SiC MOSFETs is investigated using the scattering theory of two-dimensional electron gases. We first establish that nei…
cond-mat.mtrl-sci2017
Characterization of Traps at Nitrided SiO/SiC Interfaces near the Conduction Band Edge by using Hall Effect Measurements
Tetsuo Hatakeyama, Yuji Kiuchi, Mitsuru Sometani +5
The effects of nitridation on the density of traps at SiO/SiC interfaces near the conduction band edge were qualitatively examined by a simple, newly developed characterization…