Characterization of Traps at Nitrided SiO${}_2$/SiC Interfaces near the Conduction Band Edge by using Hall Effect Measurements

Tetsuo Hatakeyama, Yuji Kiuchi, Mitsuru Sometani +5

The effects of nitridation on the density of traps at SiO${}_2$/SiC interfaces near the conduction band edge were qualitatively examined by a simple, newly developed characterization…